All MOSFET. SSM6G18NU Datasheet

 

SSM6G18NU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM6G18NU
   Marking Code: KE2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: 2-2Y1A

 SSM6G18NU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM6G18NU Datasheet (PDF)

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 ssm6g18nu.pdf

SSM6G18NU SSM6G18NU

SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications Combined a P-channel MOSFET and a Schottky barrier diode in one Unit: mmpackage. Low RDS (ON) and Low VF 2.00.1BA RDS(ON) = 261 m (max) (@VGS = -1.5V) RDS(ON) = 185 m (max) (@VGS = -1.8 V) RDS(ON) = 143 m (max) (@VGS = -2.5 V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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