SSM6G18NU Datasheet. Specs and Replacement

Type Designator: SSM6G18NU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm

Package: 2-2Y1A

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SSM6G18NU datasheet

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SSM6G18NU

SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications Combined a P-channel MOSFET and a Schottky barrier diode in one Unit mm package. Low RDS (ON) and Low VF 2.0 0.1 B A RDS(ON) = 261 m (max) (@VGS = -1.5V) RDS(ON) = 185 m (max) (@VGS = -1.8 V) RDS(ON) = 143 m (max) (@VGS = -2.5 V) ... See More ⇒

Detailed specifications: SSM60T03GJ, SSM60T03GP, SSM60T03GS, SSM630GP, SSM6618M, SSM6679GM, SSM6680GM, SSM6923O, IRLZ44N, SSM6H19NU, SSM6J216FE, SSM6J414TU, SSM6J505NU, SSM6J507NU, SSM6J512NU, SSM6J771G, SSM6K217FE

Keywords - SSM6G18NU MOSFET specs

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