All MOSFET. SSM6G18NU Datasheet

 

SSM6G18NU Datasheet and Replacement


   Type Designator: SSM6G18NU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: 2-2Y1A
 

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SSM6G18NU Datasheet (PDF)

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SSM6G18NU

SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications Combined a P-channel MOSFET and a Schottky barrier diode in one Unit: mmpackage. Low RDS (ON) and Low VF 2.00.1BA RDS(ON) = 261 m (max) (@VGS = -1.5V) RDS(ON) = 185 m (max) (@VGS = -1.8 V) RDS(ON) = 143 m (max) (@VGS = -2.5 V)

Datasheet: SSM60T03GJ , SSM60T03GP , SSM60T03GS , SSM630GP , SSM6618M , SSM6679GM , SSM6680GM , SSM6923O , IRFP260N , SSM6H19NU , SSM6J216FE , SSM6J414TU , SSM6J505NU , SSM6J507NU , SSM6J512NU , SSM6J771G , SSM6K217FE .

History: FHD80N08B | SSG4842N | IPA60R360P7 | IPD180N10N3 | AMD510C | KNP4665A | CPC5603

Keywords - SSM6G18NU MOSFET datasheet

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