All MOSFET. SSM6N7002CFU Datasheet

 

SSM6N7002CFU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM6N7002CFU
   Marking Code: NJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 0.17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.27 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.9 Ohm
   Package: US6

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SSM6N7002CFU Datasheet (PDF)

 ..1. Size:210K  toshiba
 ssm6n7002cfu.pdf

SSM6N7002CFU SSM6N7002CFU

SSM6N7002CFUMOSFETs Silicon N-Channel MOSSSM6N7002CFUSSM6N7002CFUSSM6N7002CFUSSM6N7002CFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Gate-Source diode for protection(2) Low drain-source on-resistance: RDS(ON) = 2.8 (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 (t

 5.1. Size:172K  toshiba
 ssm6n7002fu.pdf

SSM6N7002CFU SSM6N7002CFU

SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 3.3 (max) (@VGS = 4.5 V) : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol

 5.2. Size:179K  toshiba
 ssm6n7002bfu.pdf

SSM6N7002CFU SSM6N7002CFU

SSM6N7002BFU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFU High-Speed Switching Applications Analog Switch Applications Unit: mm2.10.1 Small package1.250.1 Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 16: RDS(ON) = 2.1 (max) (@VGS = 10 V) 2 5Absolute Maximum Ratings

 5.3. Size:178K  toshiba
 ssm6n7002bfe.pdf

SSM6N7002CFU SSM6N7002CFU

SSM6N7002BFE TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOS) SSM6N7002BFE High-Speed Switching Applications Analog Switch Applications Unit: mm1.60.051.20.05 Small package Low ON-resistance : RDS(ON) = 3.3 (max) (@VGS = 4.5 V) : RDS(ON) = 2.6 (max) (@VGS = 5 V) 1 6: RDS(ON) = 2.1 (max) (@VGS = 10 V) 25Absolute Maximum Rating

 5.4. Size:219K  toshiba
 ssm6n7002kfu.pdf

SSM6N7002CFU SSM6N7002CFU

SSM6N7002KFUMOSFETs Silicon N-Channel MOS (U-MOS-H)SSM6N7002KFUSSM6N7002KFUSSM6N7002KFUSSM6N7002KFU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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