All MOSFET. SSM7002EGU Datasheet

 

SSM7002EGU Datasheet and Replacement


   Type Designator: SSM7002EGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-323
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SSM7002EGU Datasheet (PDF)

 ..1. Size:792K  silicon standard
 ssm7002egu.pdf pdf_icon

SSM7002EGU

SSM7002EGUN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002EGU acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as smallconverters and general load-switching circuits.ID 250mAThe SSM7002EGU is supplied in a RoHS-compliantPb-free; RoHS-

 7.1. Size:495K  silicon standard
 ssm7002kgen.pdf pdf_icon

SSM7002EGU

SSM7002KGENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002KGEN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 640mAD The SSM7002KGEN is supplied in an RoHS-compliantPb-free; R

 7.2. Size:808K  silicon standard
 ssm7002dgu.pdf pdf_icon

SSM7002EGU

SSM7002DGUDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM7002DG acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.ID 250mAThe SSM7002DGU is supplied in a RoHS-compliantPb-free;

 9.1. Size:333K  silicon standard
 ssm70t03h-j.pdf pdf_icon

SSM7002EGU

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History: TK2P60D | IRFBG20

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