All MOSFET. SSM70T03GJ Datasheet

 

SSM70T03GJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM70T03GJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16.5 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-251

 SSM70T03GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM70T03GJ Datasheet (PDF)

 ..1. Size:620K  silicon standard
ssm70t03gh ssm70t03gj.pdf

SSM70T03GJ SSM70T03GJ

SSM70T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM70T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 9msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 60AD The SSM70T03GH is in a TO-252 package, which isPb-free; RoHS-

 6.1. Size:333K  silicon standard
ssm70t03h-j.pdf

SSM70T03GJ SSM70T03GJ

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 9.1. Size:792K  silicon standard
ssm7002egu.pdf

SSM70T03GJ SSM70T03GJ

SSM7002EGUN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002EGU acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as smallconverters and general load-switching circuits.ID 250mAThe SSM7002EGU is supplied in a RoHS-compliantPb-free; RoHS-

 9.2. Size:495K  silicon standard
ssm7002kgen.pdf

SSM70T03GJ SSM70T03GJ

SSM7002KGENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002KGEN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 640mAD The SSM7002KGEN is supplied in an RoHS-compliantPb-free; R

 9.3. Size:808K  silicon standard
ssm7002dgu.pdf

SSM70T03GJ SSM70T03GJ

SSM7002DGUDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM7002DG acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.ID 250mAThe SSM7002DGU is supplied in a RoHS-compliantPb-free;

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: LNH04R035B

 

 
Back to Top