All MOSFET. IRLR014A Datasheet

 

IRLR014A Datasheet and Replacement


   Type Designator: IRLR014A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: TO252
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IRLR014A Datasheet (PDF)

 ..1. Size:342K  1
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IRLR014A

 ..2. Size:214K  samsung
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IRLR014A

IRLR/U014AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.2 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.122 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra

 ..3. Size:256K  inchange semiconductor
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IRLR014A

Isc N-Channel MOSFET Transistor IRLR014AFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 7.1. Size:286K  1
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IRLR014A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

Keywords - IRLR014A MOSFET datasheet

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