SSM9567GM Datasheet. Specs and Replacement
Type Designator: SSM9567GM 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SO-8
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SSM9567GM substitution
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SSM9567GM datasheet
ssm9567gm.pdf
SSM9567GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9567GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 50m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -6A D The SSM9567GM is supplied in an RoHS-compliant Pb-free; RoHS-c... See More ⇒
ssm9563m.pdf
SSM9563GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9563GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 40m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -6A D The SSM9563GM is supplied in an RoHS-compliant Pb-free; RoHS-c... See More ⇒
ssm9564gm.pdf
SSM9564GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9564GM acheives fast switching performance BVDSS -40V with low gate charge without a complex drive circuit. It RDS(ON) 28m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I -7.3A D The SSM9564GM is supplied in an RoHS-compliant Pb-free; RoHS... See More ⇒
Detailed specifications: SSM9435GJ, SSM9435GM, SSM9435K, SSM9475M, SSM9477M, SSM9510GM, SSM9563M, SSM9564GM, AO4407, SSM9575M, SSM9585GM, SSM9585GP, SSM95T06GP, SSM95T06GS, SSM95T07GP, SSM9620M, SSM9685M
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