SSM9585GP MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM9585GP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SO-8
SSM9585GP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM9585GP Datasheet (PDF)
ssm9585gm ssm9585gp.pdf
SSM9585GMP-channel Enhancement-mode Power MOSFETDSimple drive requirement BVDSS -80VLower gate charge RDS(ON) 180mFast switching characteristics I -2.7ADGPb-free; RoHS compliant.SDESCRIPTIONDDAdvanced Power MOSFETs from Silicon Standard provide theDDdesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effe
ssm9575.pdf
SSM9575 -4A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free DESCRIPTION SOT-223 The SSM9575 provide the designer with the best combination of fast switching, ruggedized device Adesign, low on-resistance and cost-effectiveness. M4FEATURES Top ViewC B1
ssm9567gm.pdf
SSM9567GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9567GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 50mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -6AD The SSM9567GM is supplied in an RoHS-compliantPb-free; RoHS-c
ssm95t07gp.pdf
SSM95T07GPN-CHANNEL ENHANCEMENT MODEPOWER MOSFET PRODUCT SUMMARY DBVDSS 75VSimple Drive Requirement RDS(ON) 5mLower On-resistance ID 80AGFast Switching Characteristic RoHS Compliant SDESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
ssm9510gm.pdf
SSM9510GMN- and P-channel Enhancement-mode Power MOSFETsN-CH BVDSS 30VSimple drive requirement D2D2D2 RDS(ON) 28mLower gate charge D1D1D1D1ID 6.9AFast switching characteristicsG2G2P-CH BVDSS -30VPb-free; RoHS compliant. S2S2 G1SO-8 S1G1RDS(ON) 55mS1 DESCRIPTIONID -5.3AAdvanced Power MOSFETs from Silicon Standard provide theD2D1designer
ssm9563m.pdf
SSM9563GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9563GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 40mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -6AD The SSM9563GM is supplied in an RoHS-compliantPb-free; RoHS-c
ssm95t06gp ssm95t06gs.pdf
SSM95T06GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 8.5mDS(ON)Fast switching ID 75AGSDescriptionGThe SSM95T06S is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The throug
ssm9564gm.pdf
SSM9564GMP-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9564GM acheives fast switching performanceBVDSS -40Vwith low gate charge without a complex drive circuit. ItRDS(ON) 28mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I -7.3AD The SSM9564GM is supplied in an RoHS-compliantPb-free; RoHS
ssm9575m.pdf
SSM9575M/GMP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -60VDSSDDLow on-resistance R 90mDS(ON)DDFast switching characteristics ID -4AGSSSO-8SDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.
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