All MOSFET. SSM9918GH Datasheet

 

SSM9918GH Datasheet and Replacement


   Type Designator: SSM9918GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-252
 

 SSM9918GH substitution

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SSM9918GH Datasheet (PDF)

 ..1. Size:301K  silicon standard
ssm9918gh ssm9918gj.pdf pdf_icon

SSM9918GH

SSM9918H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VDSSDCapable of 2.5V gate drive R 14mDS(ON)Low drive current I 45ADGSurface mount packageSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectivene

 8.1. Size:300K  silicon standard
ssm9915gh ssm9915gj.pdf pdf_icon

SSM9918GH

SSM9915H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VD DSSCapable of 2.5V gate drive R 50mDS(ON)Low drive current I 20ADGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effective

 8.2. Size:206K  silicon standard
ssm9915k.pdf pdf_icon

SSM9918GH

SSM9915KN-CHANNEL ENHANCEMENT MODE POWER MOSFETSimple drive requirement BVDSS 20VDLower gate charge RDS(ON) 50mFast switching characteristic ID 6.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Para

 8.3. Size:297K  silicon standard
ssm9916gh ssm9916gj.pdf pdf_icon

SSM9918GH

SSM9916H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 18VD DSSCapable of 2.5V gate drive RDS(ON) 25mLow drive current ID 35AGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness

Datasheet: SSM95T07GP , SSM9620M , SSM9685M , SSM9915GH , SSM9915GJ , SSM9915K , SSM9916GH , SSM9916GJ , IRFB31N20D , SSM9918GJ , SSM9922GEO , SSM9926EM , SSM9926GEO , SSM9926GM , SSM9926O , SSM9926TGO , SSM9928GEO .

History: KIA7N60H-263 | IRHY9230CM | IRFB61N15D | JFPC2N80C | STB40NS15 | SRT15N110HTC | SNN3100L10Q

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