SSM9926GM Datasheet. Specs and Replacement

Type Designator: SSM9926GM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SO-8

SSM9926GM substitution

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SSM9926GM datasheet

 ..1. Size:560K  silicon standard
ssm9926gm.pdf pdf_icon

SSM9926GM

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9926GM acheives fast switching performance BVDSS 20V with low gate charge without a complex drive circuit. It RDS(ON) 30m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 6A D The SSM9926GM is supplied in an RoHS-compliant Pb-free; Ro... See More ⇒

 6.1. Size:146K  silicon standard
ssm9926geo.pdf pdf_icon

SSM9926GM

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS G2 Low on-resistance BV 20V DSS S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 I 4.6A D TSSOP-8 D1 Surface-mount package Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resista... See More ⇒

 7.1. Size:264K  silicon standard
ssm9926o.pdf pdf_icon

SSM9926GM

SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching, ruggedized device design, ultra l... See More ⇒

 7.2. Size:242K  silicon standard
ssm9926tgo.pdf pdf_icon

SSM9926GM

SSM9926TGO N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.... See More ⇒

Detailed specifications: SSM9915K, SSM9916GH, SSM9916GJ, SSM9918GH, SSM9918GJ, SSM9922GEO, SSM9926EM, SSM9926GEO, P60NF06, SSM9926O, SSM9926TGO, SSM9928GEO, SSM9928O, SSM9930M, SSM9934GM, SSM9960GH, SSM9960GJ

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.