All MOSFET. SSM9972GS Datasheet

 

SSM9972GS Datasheet and Replacement


   Type Designator: SSM9972GS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-263
 

 SSM9972GS substitution

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SSM9972GS Datasheet (PDF)

 ..1. Size:293K  silicon standard
ssm9972gp ssm9972gs.pdf pdf_icon

SSM9972GS

SSM9972GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 18mDS(ON)Fast switching ID 60AGSDescriptionGThe SSM9972GS is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The through-

 6.1. Size:559K  silicon standard
ssm9972gi.pdf pdf_icon

SSM9972GS

SSM9972GIN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9972GI achieves fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 18mis suitable for low voltage applications such as DC/DCconverters and general switching circuits.I 35AD Pb-free; RoHS-compliant TO-220CFMThe SSM9972GI is in TO-220CFM for

 8.1. Size:587K  secos
ssm9971.pdf pdf_icon

SSM9972GS

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

 8.2. Size:238K  silicon standard
ssm9977gm.pdf pdf_icon

SSM9972GS

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

Datasheet: SSM9960M , SSM9962M , SSM9971GD , SSM9971GH , SSM9971GJ , SSM9971GM , SSM9972GI , SSM9972GP , 2N7002 , SSM9973GH , SSM9973GJ , SSM9973GM , SSM9974GP , SSM9974GS , SSM9975M , SSM9977GH , SSM9977GJ .

History: NP180N04TUJ | SRT10N160LD

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