SSM9974GP Datasheet. Specs and Replacement

Type Designator: SSM9974GP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 495 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-220

SSM9974GP substitution

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SSM9974GP datasheet

 ..1. Size:717K  silicon standard
ssm9974gp ssm9974gs.pdf pdf_icon

SSM9974GP

SSM9974GP,S N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9974 acheives fast switching performance BVDSS 60V with low gate charge without a complex drive circuit. It is RDS(ON) 12m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 72A D The SSM9974GS is in a TO-263 package, which is Pb-free; RoHS-co... See More ⇒

 8.1. Size:587K  secos
ssm9971.pdf pdf_icon

SSM9974GP

SSM9971 5A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-223 The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design. Features * Simple Drive Requirement * Low On-Resistance Millimeter Millimeter REF. REF. Mi... See More ⇒

 8.2. Size:238K  silicon standard
ssm9977gm.pdf pdf_icon

SSM9974GP

SSM9977M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V DSS D2 D2 Lower gate charge R 90m DS(ON) D1 D1 Fast switching characteristics ID 3.5A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

 8.3. Size:249K  silicon standard
ssm9975m.pdf pdf_icon

SSM9974GP

SSM9975M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V D2 DSS D2 D1 Lower gate charge R 21m DS(ON) D1 Fast switching characteristics ID 7.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and ... See More ⇒

Detailed specifications: SSM9971GJ, SSM9971GM, SSM9972GI, SSM9972GP, SSM9972GS, SSM9973GH, SSM9973GJ, SSM9973GM, IRFP064N, SSM9974GS, SSM9975M, SSM9977GH, SSM9977GJ, SSM9977GM, SSM9980GH, SSM9980GJ, SSM9980M

Keywords - SSM9974GP MOSFET specs

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