All MOSFET. SSM9974GS Datasheet

 

SSM9974GS Datasheet and Replacement


   Type Designator: SSM9974GS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 495 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-263
 

 SSM9974GS substitution

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SSM9974GS Datasheet (PDF)

 ..1. Size:717K  silicon standard
ssm9974gp ssm9974gs.pdf pdf_icon

SSM9974GS

SSM9974GP,SN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM9974 acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 72AD The SSM9974GS is in a TO-263 package, which isPb-free; RoHS-co

 8.1. Size:587K  secos
ssm9971.pdf pdf_icon

SSM9974GS

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

 8.2. Size:238K  silicon standard
ssm9977gm.pdf pdf_icon

SSM9974GS

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

 8.3. Size:249K  silicon standard
ssm9975m.pdf pdf_icon

SSM9974GS

SSM9975M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VD2 DSSD2D1Lower gate charge R 21mDS(ON)D1Fast switching characteristics ID 7.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

Datasheet: SSM9971GM , SSM9972GI , SSM9972GP , SSM9972GS , SSM9973GH , SSM9973GJ , SSM9973GM , SSM9974GP , IRFP064N , SSM9975M , SSM9977GH , SSM9977GJ , SSM9977GM , SSM9980GH , SSM9980GJ , SSM9980M , SSM9985GM .

History: MTB50P03HDLT4 | NTTFS4C10N | SNN4010D | HSBA3058 | STI60N55F3 | IRFB7446PBF | NP60N04MUG

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