All MOSFET. SSM9977GH Datasheet

 

SSM9977GH Datasheet and Replacement


   Type Designator: SSM9977GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-252
 

 SSM9977GH substitution

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SSM9977GH Datasheet (PDF)

 ..1. Size:277K  silicon standard
ssm9977gh ssm9977gj.pdf pdf_icon

SSM9977GH

SSM9977GH,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow gate-charge BV 60VDSSDSimple drive requirement R 90mDS(ON)Fast switching ID 11AGSDescriptionGThe SSM9977GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC converters. The through-h

 6.1. Size:238K  silicon standard
ssm9977gm.pdf pdf_icon

SSM9977GH

SSM9977M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VDSSD2D2Lower gate charge R 90mDS(ON)D1D1Fast switching characteristics ID 3.5AG2S2G1SO-8S1Description D2D1Advanced Power MOSFETs from Silicon Standard provide theG2G1designer with the best combination of fast switching,ruggedized device design, low on-resistance

 8.1. Size:587K  secos
ssm9971.pdf pdf_icon

SSM9977GH

SSM99715A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionSOT-223The SSM9971 provide the designer with the best combination of fast switching,low on-resistance,cost-effectiveness and ruggedized device design.Features* Simple Drive Requirement* Low On-ResistanceMillimeter Millimeter REF. REF. Mi

 8.2. Size:249K  silicon standard
ssm9975m.pdf pdf_icon

SSM9977GH

SSM9975M/GMDUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETSSimple drive requirement BV 60VD2 DSSD2D1Lower gate charge R 21mDS(ON)D1Fast switching characteristics ID 7.6AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and

Datasheet: SSM9972GP , SSM9972GS , SSM9973GH , SSM9973GJ , SSM9973GM , SSM9974GP , SSM9974GS , SSM9975M , IRFZ44N , SSM9977GJ , SSM9977GM , SSM9980GH , SSM9980GJ , SSM9980M , SSM9985GM , SSM9987GH , SSM9987GM .

History: RF1S640SM | STH185N10F3-6

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