SSM9977GM Datasheet. Specs and Replacement

Type Designator: SSM9977GM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SO-8

SSM9977GM substitution

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SSM9977GM datasheet

 ..1. Size:238K  silicon standard
ssm9977gm.pdf pdf_icon

SSM9977GM

SSM9977M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V DSS D2 D2 Lower gate charge R 90m DS(ON) D1 D1 Fast switching characteristics ID 3.5A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the G2 G1 designer with the best combination of fast switching, ruggedized device design, low on-resistance ... See More ⇒

 6.1. Size:277K  silicon standard
ssm9977gh ssm9977gj.pdf pdf_icon

SSM9977GM

SSM9977GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 90m DS(ON) Fast switching ID 11A G S Description G The SSM9977GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-h... See More ⇒

 8.1. Size:587K  secos
ssm9971.pdf pdf_icon

SSM9977GM

SSM9971 5A, 60V,RDS(ON) 50m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-223 The SSM9971 provide the designer with the best combination of fast switching,low on-resistance, cost-effectiveness and ruggedized device design. Features * Simple Drive Requirement * Low On-Resistance Millimeter Millimeter REF. REF. Mi... See More ⇒

 8.2. Size:249K  silicon standard
ssm9975m.pdf pdf_icon

SSM9977GM

SSM9975M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 60V D2 DSS D2 D1 Lower gate charge R 21m DS(ON) D1 Fast switching characteristics ID 7.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and ... See More ⇒

Detailed specifications: SSM9973GH, SSM9973GJ, SSM9973GM, SSM9974GP, SSM9974GS, SSM9975M, SSM9977GH, SSM9977GJ, IRF740, SSM9980GH, SSM9980GJ, SSM9980M, SSM9985GM, SSM9987GH, SSM9987GM, SSN1N45BBU, SSN1N45BTA

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