SSM9980M Datasheet. Specs and Replacement

Type Designator: SSM9980M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SO-8

SSM9980M substitution

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SSM9980M datasheet

 ..1. Size:226K  silicon standard
 ssm9980m.pdf pdf_icon

SSM9980M

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 80V D2 DSS D2 D1 Lower gate charge R 52m DS(ON) D1 Fast switching characteristics ID 4.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and ... See More ⇒

 7.1. Size:764K  silicon standard
 ssm9980gh ssm9980gj.pdf pdf_icon

SSM9980M

SSM9980GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM9980Gx acheives fast switching performance BVDSS 80V with low gate charge without a complex drive circuit. It is RDS(ON) 45m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 21A D The SSM9980GH is in a TO-252 package, which is Pb-free; RoHS-... See More ⇒

 8.1. Size:202K  silicon standard
 ssm9985gm.pdf pdf_icon

SSM9980M

SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40V D Fast Switching Speed D D RDS(ON) 15m Surface Mount Package D ID 10A G S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and... See More ⇒

 8.2. Size:192K  silicon standard
 ssm9987gh.pdf pdf_icon

SSM9980M

SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 80V D RDS(ON) 90m Low Gate Charge Single Drive Requirement ID 15A G Fast Switching Performance S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. G D S provide the designer with the best combination of fast switching, TO-252(H) ruggedized device design, low on-resistance and c... See More ⇒

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Detailed specifications: SSM9974GP, SSM9974GS, SSM9975M, SSM9977GH, SSM9977GJ, SSM9977GM, SSM9980GH, SSM9980GJ, IRF540N, SSM9985GM, SSM9987GH, SSM9987GM, SSN1N45BBU, SSN1N45BTA, SSP3N90, SSP45N20B, SSP4N60B

Keywords - SSM9980M MOSFET specs

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