SSP4N60B Datasheet and Replacement
Type Designator: SSP4N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220
SSP4N60B substitution
SSP4N60B Datasheet (PDF)
ssp4n60b sss4n60b.pdf

SSP4N60B/SSS4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to Fast switchi
ssp4n60as.pdf

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
ssp4n80.pdf

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Datasheet: SSM9980M , SSM9985GM , SSM9987GH , SSM9987GM , SSN1N45BBU , SSN1N45BTA , SSP3N90 , SSP45N20B , IRF640N , SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B , SSR1N60BTM , SSR2N60B , SSRK7002LT1G , SSS4N60B .
History: ME4542 | TPC8066-H | HSBA3052 | NCE30H15BG | IRLR120NPBF | APT9M100S | IRF610L
Keywords - SSP4N60B MOSFET datasheet
SSP4N60B cross reference
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History: ME4542 | TPC8066-H | HSBA3052 | NCE30H15BG | IRLR120NPBF | APT9M100S | IRF610L



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