All MOSFET. IRLR220A Datasheet

 

IRLR220A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLR220A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 33 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 4.6 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 330 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: DPAK

IRLR220A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR220A Datasheet (PDF)

1.1. irlr220a.pdf Size:904K _samsung

IRLR220A
IRLR220A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte

5.1. irlr210a irlu210a.pdf Size:232K _fairchild_semi

IRLR220A
IRLR220A

IRLR/U210A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology RDS(on) = 1.5Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 2.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK I-PAK ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

5.2. irlr230a irlu230a.pdf Size:230K _fairchild_semi

IRLR220A
IRLR220A

IRLR/U230A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 7.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK I-PAK ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

 5.3. irlr2908.pdf Size:206K _international_rectifier

IRLR220A
IRLR220A

PD - 94501 IRLR2908 AUTOMOTIVE MOSFET IRLU2908 HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 80V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 28mΩ l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET ® Power MOSF

5.4. irlu2905zpbf irlr2905zpbf.pdf Size:328K _international_rectifier

IRLR220A
IRLR220A

PD - 95774B IRLR2905ZPbF IRLU2905ZPbF Features HEXFET® Power MOSFET Logic Level D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175°C Operating Temperature RDS(on) = 13.5mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 42A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extrem

 5.5. irlr2905pbf irlu2905pbf.pdf Size:314K _international_rectifier

IRLR220A
IRLR220A

PD- 95084A IRLR/U2905PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR2905) VDSS = 55V l Straight Lead (IRLU2905) l Advanced Process Technology RDS(on) = 0.027Ω l Fast Switching G l Fully Avalanche Rated ID = 42A… l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing t

5.6. irlu2703pbf irlr2703pbf.pdf Size:313K _international_rectifier

IRLR220A
IRLR220A

PD- 95083A IRLR/U2703PbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045Ω G l Fast Switching l Fully Avalanche Rated ID = 23A… S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te

5.7. irlu2705pbf irlr2705pbf.pdf Size:260K _international_rectifier

IRLR220A
IRLR220A

PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET® Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040Ω G l Fully Avalanche Rated l Lead-Free ID = 28A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

5.8. irlr2905.pdf Size:135K _international_rectifier

IRLR220A
IRLR220A

PD- 91334E IRLR/U2905 HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2905) Straight Lead (IRLU2905) RDS(on) = 0.027Ω G Advanced Process Technology Fast Switching ID = 42A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the l

5.9. irlr2908pbf irlu2908pbf.pdf Size:335K _international_rectifier

IRLR220A
IRLR220A

PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET® Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 80V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 28mΩ Fast Switching G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 30A S Description This HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve

5.10. irlr2703.pdf Size:210K _international_rectifier

IRLR220A
IRLR220A

PD- 9.1335B IRLR/U2703 PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR2703) Straight Lead (IRLU2703) RDS(on) = 0.045Ω G Advanced Process Technology Fast Switching ID = 23A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

5.11. auirlr2905ztr.pdf Size:273K _international_rectifier

IRLR220A
IRLR220A

PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET® Power MOSFET ● Logic Level ● Advanced Process Technology D V(BR)DSS 55V ● Ultra Low On-Resistance ● 175°C Operating Temperature RDS(on) max. 13.5mΩ ● Fast Switching G ID (Silicon Limited) 60A ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant S ID (Package Limited) 42A ● Automot

5.12. auirlr2703tr.pdf Size:276K _international_rectifier

IRLR220A
IRLR220A

PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive • Low On-Resistance D • Dynamic dV/dT Rating V(BR)DSS 30V • 175°C Operating Temperature RDS(on) max. 45m Ω • Fast Switching G ID (Silicon Limited) • Fully Avalanche Rated 23A • Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20

5.13. irlr2705.pdf Size:162K _international_rectifier

IRLR220A
IRLR220A

PD- 9.1317B IRLR/U2705 PRELIMINARY HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 55V Surface Mount (IRLR2705) Straight Lead (IRLU2705) RDS(on) = 0.040Ω G Advanced Process Technology Fast Switching ID = 28A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

5.14. auirlr2905tr.pdf Size:238K _international_rectifier

IRLR220A
IRLR220A

AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 • Advanced Planar Technology HEXFET® Power MOSFET • Logic-Level Gate Drive D V(BR)DSS • Low On-Resistance 55V • Dynamic dV/dT Rating RDS(on) max. 27m • 175°C Operating Temperature G • Fast Switching ID 42A S • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax D • Lead-Free, RoHS Compliant • Autom

5.15. irlr230a.pdf Size:907K _samsung

IRLR220A
IRLR220A

 Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.335 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

5.16. irlr210a.pdf Size:884K _samsung

IRLR220A
IRLR220A

 Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 1.185 Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

5.17. irlr2908.pdf Size:242K _inchange_semiconductor

IRLR220A
IRLR220A

isc N-Channel MOSFET Transistor IRLR2908, IIRLR2908 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤28mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V Gate-

5.18. irlr2905.pdf Size:241K _inchange_semiconductor

IRLR220A
IRLR220A

isc N-Channel MOSFET Transistor IRLR2905, IIRLR2905 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

5.19. irlr2905z.pdf Size:242K _inchange_semiconductor

IRLR220A
IRLR220A

isc N-Channel MOSFET Transistor IRLR2905Z, IIRLR2905Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V G

5.20. irlr2703.pdf Size:241K _inchange_semiconductor

IRLR220A
IRLR220A

isc N-Channel MOSFET Transistor IRLR2703, IIRLR2703 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-

5.21. irlr2705.pdf Size:241K _inchange_semiconductor

IRLR220A
IRLR220A

isc N-Channel MOSFET Transistor IRLR2705, IIRLR2705 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

Datasheet: IRLR024 , IRLR024A , IRLR024N , IRLR110A , IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRF5210 , IRLR230A , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A .

 

 
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