AFC3366W Datasheet and Replacement
Type Designator: AFC3366W
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: DFN3X3-8L
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AFC3366W Datasheet (PDF)
afc3366w.pdf

AFC3366W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC3366W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=48m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/10A,RDS(ON)=54m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power managem
afc3346w.pdf

AFC3346W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC3346W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)= 28m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)= 38m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power manag
afc3326ws.pdf

AFC3326WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC3326WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power manag
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BSO220N03MD | NCEP25ND10AG | BUZ103 | STD5N95K5 | SL12N100K | 1N60L-TF3-T | 2SK1345
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History: BSO220N03MD | NCEP25ND10AG | BUZ103 | STD5N95K5 | SL12N100K | 1N60L-TF3-T | 2SK1345



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