All MOSFET. AFC4539WS Datasheet

 

AFC4539WS Datasheet and Replacement


   Type Designator: AFC4539WS
   Marking Code: 4539WS
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SOP-8P
 

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AFC4539WS Datasheet (PDF)

 ..1. Size:885K  alfa-mos
 afc4539ws.pdf pdf_icon

AFC4539WS

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 7.1. Size:885K  alfa-mos
 afc4539s.pdf pdf_icon

AFC4539WS

AFC4539S Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=40m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma

 9.1. Size:988K  alfa-mos
 afc4599.pdf pdf_icon

AFC4539WS

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.2. Size:802K  alfa-mos
 afc4510s.pdf pdf_icon

AFC4539WS

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p

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Datasheet: AFC2519W , AFC3326WS , AFC3346W , AFC3366W , AFC4510S , AFC4516 , AFC4516W , AFC4539S , IRFP450 , AFC4559 , AFC4599 , AFC4604W , AFC5521 , AFC5604 , AFC5606 , AFC6332 , AFC6601 .

History: IRFU3709 | 2SK2055 | CEB02N7G | RUH40190M | 2SK2009

Keywords - AFC4539WS MOSFET datasheet

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