AFN10N60T220FT PDF and Equivalents Search

 

AFN10N60T220FT Specs and Replacement


   Type Designator: AFN10N60T220FT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 60.4 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

 AFN10N60T220FT substitution

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AFN10N60T220FT datasheet

 ..1. Size:486K  alfa-mos
 afn10n60t220ft afn10n60t220t.pdf pdf_icon

AFN10N60T220FT

AFN10N60 Alfa-MOS 600V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N60 is an N-channel enhancement mode Power 600V/5A,RDS(ON)=1 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state ... See More ⇒

 7.1. Size:526K  alfa-mos
 afn10n65t220ft afn10n65t220t.pdf pdf_icon

AFN10N60T220FT

AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state ... See More ⇒

 9.1. Size:608K  alfa-mos
 afn1024.pdf pdf_icon

AFN10N60T220FT

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

 9.2. Size:560K  alfa-mos
 afn1032.pdf pdf_icon

AFN10N60T220FT

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

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Detailed specifications: AFN08N50T220T , AFN1012 , AFN1012E , AFN1024 , AFN1024E , AFN1032 , AFN1034 , AFN1072 , IRFZ48N , AFN10N60T220T , AFN10N65T220FT , AFN10N65T220T , AFN12N60T220FT , AFN12N60T220T , AFN12N65T220FT , AFN12N65T220T , AFN1304 .

Keywords - AFN10N60T220FT MOSFET specs

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