AFN10N65T220T Datasheet. Specs and Replacement

Type Designator: AFN10N65T220T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73.67 nS

Cossⓘ - Output Capacitance: 128.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220

AFN10N65T220T substitution

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AFN10N65T220T datasheet

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 afn10n65t220ft afn10n65t220t.pdf pdf_icon

AFN10N65T220T

AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state ... See More ⇒

 7.1. Size:486K  alfa-mos
 afn10n60t220ft afn10n60t220t.pdf pdf_icon

AFN10N65T220T

AFN10N60 Alfa-MOS 600V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N60 is an N-channel enhancement mode Power 600V/5A,RDS(ON)=1 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state ... See More ⇒

 9.1. Size:608K  alfa-mos
 afn1024.pdf pdf_icon

AFN10N65T220T

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

 9.2. Size:560K  alfa-mos
 afn1032.pdf pdf_icon

AFN10N65T220T

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

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Detailed specifications: AFN1024, AFN1024E, AFN1032, AFN1034, AFN1072, AFN10N60T220FT, AFN10N60T220T, AFN10N65T220FT, IRLB3034, AFN12N60T220FT, AFN12N60T220T, AFN12N65T220FT, AFN12N65T220T, AFN1304, AFN1304E, AFN1306, AFN1330S

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