All MOSFET. AFN12N60T220T Datasheet

 

AFN12N60T220T MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN12N60T220T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24.35 nC
   trⓘ - Rise Time: 71.67 nS
   Cossⓘ - Output Capacitance: 413 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220

 AFN12N60T220T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN12N60T220T Datasheet (PDF)

 ..1. Size:461K  alfa-mos
 afn12n60t220ft afn12n60t220t.pdf

AFN12N60T220T AFN12N60T220T

AFN12N60 Alfa-MOS 600V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N60 is an N-channel enhancement mode Power 600V/6A,RDS(ON)=0.75(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta

 7.1. Size:568K  alfa-mos
 afn12n65t220ft afn12n65t220t.pdf

AFN12N60T220T AFN12N60T220T

AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMN66D0LW

 

 
Back to Top