AFN12N60T220T Datasheet. Specs and Replacement

Type Designator: AFN12N60T220T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71.67 nS

Cossⓘ - Output Capacitance: 413 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220

AFN12N60T220T substitution

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AFN12N60T220T datasheet

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 afn12n60t220ft afn12n60t220t.pdf pdf_icon

AFN12N60T220T

AFN12N60 Alfa-MOS 600V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N60 is an N-channel enhancement mode Power 600V/6A,RDS(ON)=0.75 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta... See More ⇒

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 afn12n65t220ft afn12n65t220t.pdf pdf_icon

AFN12N60T220T

AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat... See More ⇒

Detailed specifications: AFN1032, AFN1034, AFN1072, AFN10N60T220FT, AFN10N60T220T, AFN10N65T220FT, AFN10N65T220T, AFN12N60T220FT, IRFB7545, AFN12N65T220FT, AFN12N65T220T, AFN1304, AFN1304E, AFN1306, AFN1330S, AFN1443, AFN1501S

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