AFN12N65T220FT Datasheet and Replacement
Type Designator: AFN12N65T220FT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 61.67 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220F
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AFN12N65T220FT Datasheet (PDF)
afn12n65t220ft afn12n65t220t.pdf

AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat
afn12n60t220ft afn12n60t220t.pdf

AFN12N60 Alfa-MOS 600V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N60 is an N-channel enhancement mode Power 600V/6A,RDS(ON)=0.75(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK322 | WM02DH08D | KF5N50IZ | GSM4936S | 2N4224 | KF10N65F | ATM2N65TE
Keywords - AFN12N65T220FT MOSFET datasheet
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History: 2SK322 | WM02DH08D | KF5N50IZ | GSM4936S | 2N4224 | KF10N65F | ATM2N65TE



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