AFN1304E Datasheet. Specs and Replacement

Type Designator: AFN1304E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOT-323

AFN1304E substitution

- MOSFET ⓘ Cross-Reference Search

 

AFN1304E datasheet

 ..1. Size:593K  alfa-mos
 afn1304e.pdf pdf_icon

AFN1304E

AFN1304E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=400m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m @VGS=1.8V These devices are particularly suited for low ... See More ⇒

 7.1. Size:592K  alfa-mos
 afn1304.pdf pdf_icon

AFN1304E

AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m @VGS=1.8V These devices are particularly suited for low S... See More ⇒

 8.1. Size:799K  alfa-mos
 afn1306.pdf pdf_icon

AFN1304E

AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1306, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m @VGS=1.8V These devices are particularly suited for low S... See More ⇒

 9.1. Size:270K  alfa-mos
 afn1330s.pdf pdf_icon

AFN1304E

AFN1330S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)=7.5 @VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.05A , R DS(ON)=7.5 @VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒

SHOW MORE

Detailed specifications: AFN10N60T220T, AFN10N65T220FT, AFN10N65T220T, AFN12N60T220FT, AFN12N60T220T, AFN12N65T220FT, AFN12N65T220T, AFN1304, RU7088R, AFN1306, AFN1330S, AFN1443, AFN1501S, AFN1510S, AFN1520, AFN1530, AFN1912

Keywords - AFN1304E MOSFET specs

 AFN1304E cross reference

 AFN1304E equivalent finder

 AFN1304E pdf lookup

 AFN1304E substitution

 AFN1304E replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.