AFN2306AE Datasheet. Specs and Replacement

Type Designator: AFN2306AE  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: SOT-23

AFN2306AE substitution

- MOSFET ⓘ Cross-Reference Search

 

AFN2306AE datasheet

 ..1. Size:721K  alfa-mos
 afn2306ae.pdf pdf_icon

AFN2306AE

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low ... See More ⇒

 6.1. Size:719K  alfa-mos
 afn2306a.pdf pdf_icon

AFN2306AE

AFN2306A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low ... See More ⇒

 8.1. Size:476K  alfa-mos
 afn2304s.pdf pdf_icon

AFN2306AE

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 8.2. Size:608K  alfa-mos
 afn2304as.pdf pdf_icon

AFN2306AE

AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

SHOW MORE

Detailed specifications: AFN2014, AFN2302AS, AFN2302S, AFN2304, AFN2304A, AFN2304AS, AFN2304S, AFN2306A, IRF1404, AFN2308, AFN2308A, AFN2312, AFN2312A, AFN2318, AFN2318A, AFN2324, AFN2324A

Keywords - AFN2306AE MOSFET specs

 AFN2306AE cross reference

 AFN2306AE equivalent finder

 AFN2306AE pdf lookup

 AFN2306AE substitution

 AFN2306AE replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.