AFN2308A Datasheet. Specs and Replacement

Type Designator: AFN2308A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT-23

AFN2308A substitution

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AFN2308A datasheet

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AFN2308A

AFN2308A Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

 7.1. Size:484K  alfa-mos
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AFN2308A

AFN2308 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 8.1. Size:721K  alfa-mos
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AFN2308A

AFN2306AE Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low ... See More ⇒

 8.2. Size:476K  alfa-mos
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AFN2308A

AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

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Detailed specifications: AFN2302S, AFN2304, AFN2304A, AFN2304AS, AFN2304S, AFN2306A, AFN2306AE, AFN2308, IRFB4110, AFN2312, AFN2312A, AFN2318, AFN2318A, AFN2324, AFN2324A, AFN2330, AFN2330A

Keywords - AFN2308A MOSFET specs

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