All MOSFET. AFN3309WS Datasheet

 

AFN3309WS Datasheet and Replacement


   Type Designator: AFN3309WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN3X3
 

 AFN3309WS substitution

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AFN3309WS Datasheet (PDF)

 ..1. Size:588K  alfa-mos
 afn3309ws.pdf pdf_icon

AFN3309WS

AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:596K  alfa-mos
 afn3306ws.pdf pdf_icon

AFN3309WS

AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.2. Size:577K  alfa-mos
 afn3302w.pdf pdf_icon

AFN3309WS

AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V These devices are particularly suited for low Super

 9.1. Size:498K  alfa-mos
 afn3310w.pdf pdf_icon

AFN3309WS

AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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Datasheet: AFN3009S , AFN3015S , AFN3016S , AFN3019S , AFN3025S , AFN3030 , AFN3302W , AFN3306WS , IRFP260 , AFN3310W , AFN3316W , AFN3400 , AFN3400A , AFN3400AS , AFN3400S , AFN3402 , AFN3402A .

History: HTD058N03R | DMN24H3D5L | DMN24H11DS | IRFS9521 | IRFS9522 | AM4426N

Keywords - AFN3309WS MOSFET datasheet

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