AFN3309WS Datasheet. Specs and Replacement

Type Designator: AFN3309WS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN3X3

AFN3309WS substitution

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AFN3309WS datasheet

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AFN3309WS

AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒

 8.1. Size:596K  alfa-mos
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AFN3309WS

AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

 8.2. Size:577K  alfa-mos
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AFN3309WS

AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m @VGS=1.8V These devices are particularly suited for low Super... See More ⇒

 9.1. Size:498K  alfa-mos
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AFN3309WS

AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

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Detailed specifications: AFN3009S, AFN3015S, AFN3016S, AFN3019S, AFN3025S, AFN3030, AFN3302W, AFN3306WS, AO3401, AFN3310W, AFN3316W, AFN3400, AFN3400A, AFN3400AS, AFN3400S, AFN3402, AFN3402A

Keywords - AFN3309WS MOSFET specs

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