AFN3400 Datasheet. Specs and Replacement

Type Designator: AFN3400  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: SOT-23

AFN3400 substitution

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AFN3400 datasheet

 ..1. Size:578K  alfa-mos
 afn3400.pdf pdf_icon

AFN3400

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super... See More ⇒

 0.1. Size:550K  alfa-mos
 afn3400s.pdf pdf_icon

AFN3400

AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Sup... See More ⇒

 0.2. Size:682K  alfa-mos
 afn3400as.pdf pdf_icon

AFN3400

AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low 3... See More ⇒

 0.3. Size:710K  alfa-mos
 afn3400a.pdf pdf_icon

AFN3400

AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m @VGS=2.5V These devices are particularly suited for low 30V... See More ⇒

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Detailed specifications: AFN3019S, AFN3025S, AFN3030, AFN3302W, AFN3306WS, AFN3309WS, AFN3310W, AFN3316W, 4435, AFN3400A, AFN3400AS, AFN3400S, AFN3402, AFN3402A, AFN3404, AFN3406, AFN3406A

Keywords - AFN3400 MOSFET specs

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