AFN3402A MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN3402A
Marking Code: 02*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V
Maximum Drain Current |Id|: 3.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 2.3 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
Package: SOT-23
AFN3402A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN3402A Datasheet (PDF)
afn3402a.pdf
AFN3402A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=87m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Su
afn3402.pdf
AFN3402 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V These devices are particularly suited for low Supe
afn3400.pdf
AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super
afn3406as.pdf
AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn3400s.pdf
AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Sup
afn3406a.pdf
AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn3406.pdf
AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3400as.pdf
AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low 3
afn3406s.pdf
AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn3400a.pdf
AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V These devices are particularly suited for low 30V
afn3404.pdf
AFN3404 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.2A,RDS(ON)=34m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3404s23rg.pdf
AFN3404S23RGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23
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