AFN3452 Datasheet. Specs and Replacement

Type Designator: AFN3452  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TSOP-6

AFN3452 substitution

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AFN3452 datasheet

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AFN3452

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super... See More ⇒

 8.1. Size:570K  alfa-mos
 afn3458.pdf pdf_icon

AFN3452

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 8.2. Size:278K  alfa-mos
 afn3454.pdf pdf_icon

AFN3452

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 8.3. Size:574K  alfa-mos
 afn3456.pdf pdf_icon

AFN3452

AFN3456 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

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Detailed specifications: AFN3416, AFN3424, AFN3424A, AFN3426, AFN3430W, AFN3432, AFN3436, AFN3446, 2SK3568, AFN3454, AFN3456, AFN3456S, AFN3458, AFN3458BW, AFN3460, AFN3466, AFN3484

Keywords - AFN3452 MOSFET specs

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