IRLS620A PDF and Equivalents Search

 

IRLS620A PDF Specs and Replacement


   Type Designator: IRLS620A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

 IRLS620A substitution

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IRLS620A PDF Specs

 ..1. Size:923K  samsung
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IRLS620A

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.8 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.1 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.609 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings ... See More ⇒

 9.1. Size:258K  fairchild semi
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IRLS620A

IRLS640A Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute M... See More ⇒

 9.2. Size:914K  samsung
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IRLS620A

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.18 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9.8 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.145 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rati... See More ⇒

 9.3. Size:920K  samsung
irls630a.pdf pdf_icon

IRLS620A

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic Level Gate Drive RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 6.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin... See More ⇒

Detailed specifications: IRLR3103 , IRLR3303 , IRLR3410 , IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A , 75N75 , IRLS630A , IRLS640A , IRLSZ14A , IRLSZ24A , IRLSZ34A , IRLSZ44A , IRLU010 , IRLU014 .

Keywords - IRLS620A MOSFET specs

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