All MOSFET. AFN3606S Datasheet

 

AFN3606S Datasheet and Replacement


   Type Designator: AFN3606S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO-220
 

 AFN3606S substitution

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AFN3606S Datasheet (PDF)

 ..1. Size:601K  alfa-mos
 afn3606s.pdf pdf_icon

AFN3606S

AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.1. Size:559K  alfa-mos
 afn3609s.pdf pdf_icon

AFN3606S

AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.1. Size:568K  alfa-mos
 afn3630.pdf pdf_icon

AFN3606S

AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:588K  alfa-mos
 afn3684s.pdf pdf_icon

AFN3606S

AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

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Datasheet: AFN3456 , AFN3456S , AFN3458 , AFN3458BW , AFN3460 , AFN3466 , AFN3484 , AFN3484S , STF13NM60N , AFN3609S , AFN3630 , AFN3684S , AFN3806W , AFN3814W , AFN4048WS , AFN4102W , AFN4134 .

History: MTN40N03J3 | STW24N60M2 | STW25N80K5

Keywords - AFN3606S MOSFET datasheet

 AFN3606S cross reference
 AFN3606S equivalent finder
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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