AFN3606S Datasheet. Specs and Replacement

Type Designator: AFN3606S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-220

AFN3606S substitution

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AFN3606S datasheet

 ..1. Size:601K  alfa-mos
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AFN3606S

AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 8.1. Size:559K  alfa-mos
 afn3609s.pdf pdf_icon

AFN3606S

AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.1. Size:568K  alfa-mos
 afn3630.pdf pdf_icon

AFN3606S

AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.2. Size:588K  alfa-mos
 afn3684s.pdf pdf_icon

AFN3606S

AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l... See More ⇒

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Detailed specifications: AFN3456, AFN3456S, AFN3458, AFN3458BW, AFN3460, AFN3466, AFN3484, AFN3484S, STF13NM60N, AFN3609S, AFN3630, AFN3684S, AFN3806W, AFN3814W, AFN4048WS, AFN4102W, AFN4134

Keywords - AFN3606S MOSFET specs

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