All MOSFET. AFN4210W Datasheet

 

AFN4210W Datasheet and Replacement


   Type Designator: AFN4210W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOP-8P
 

 AFN4210W substitution

   - MOSFET ⓘ Cross-Reference Search

 

AFN4210W Datasheet (PDF)

 ..1. Size:578K  alfa-mos
afn4210w.pdf pdf_icon

AFN4210W

AFN4210W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=40m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 7.1. Size:577K  alfa-mos
afn4210.pdf pdf_icon

AFN4210W

AFN4210 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:483K  alfa-mos
afn4214w.pdf pdf_icon

AFN4210W

AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 8.2. Size:482K  alfa-mos
afn4214.pdf pdf_icon

AFN4210W

AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low

Datasheet: AFN3814W , AFN4048WS , AFN4102W , AFN4134 , AFN4134W , AFN4172S , AFN4172WS , AFN4210 , IRF1405 , AFN4214 , AFN4214W , AFN4228 , AFN4248W , AFN4412 , AFN4412W , AFN4422 , AFN4424 .

History: ELM16402EA | WML36N65C4 | AM2370N | DMN5L06DMKQ | DMP3010LPSQ | BL3N105-D | APT14M100S

Keywords - AFN4210W MOSFET datasheet

 AFN4210W cross reference
 AFN4210W equivalent finder
 AFN4210W lookup
 AFN4210W substitution
 AFN4210W replacement

 

 
Back to Top

 


 
.