AFN4412 Datasheet. Specs and Replacement

Type Designator: AFN4412  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP-8P

AFN4412 substitution

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AFN4412 datasheet

 ..1. Size:576K  alfa-mos
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AFN4412

AFN4412 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 0.1. Size:576K  alfa-mos
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AFN4412

AFN4412W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

 9.1. Size:574K  alfa-mos
afn4424.pdf pdf_icon

AFN4412

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.2. Size:600K  alfa-mos
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AFN4412

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

Detailed specifications: AFN4172S, AFN4172WS, AFN4210, AFN4210W, AFN4214, AFN4214W, AFN4228, AFN4248W, K2611, AFN4412W, AFN4422, AFN4424, AFN4424W, AFN4440, AFN4440W, AFN4486, AFN4546

Keywords - AFN4412 MOSFET specs

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