All MOSFET. AFN4412 Datasheet

 

AFN4412 Datasheet and Replacement


   Type Designator: AFN4412
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP-8P
 

 AFN4412 substitution

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AFN4412 Datasheet (PDF)

 ..1. Size:576K  alfa-mos
 afn4412.pdf pdf_icon

AFN4412

AFN4412 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 0.1. Size:576K  alfa-mos
 afn4412w.pdf pdf_icon

AFN4412

AFN4412W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:574K  alfa-mos
 afn4424.pdf pdf_icon

AFN4412

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:600K  alfa-mos
 afn4440w.pdf pdf_icon

AFN4412

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Datasheet: AFN4172S , AFN4172WS , AFN4210 , AFN4210W , AFN4214 , AFN4214W , AFN4228 , AFN4248W , K2611 , AFN4412W , AFN4422 , AFN4424 , AFN4424W , AFN4440 , AFN4440W , AFN4486 , AFN4546 .

History: AM2344N

Keywords - AFN4412 MOSFET datasheet

 AFN4412 cross reference
 AFN4412 equivalent finder
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 AFN4412 replacement

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