All MOSFET. AFN4440 Datasheet

 

AFN4440 Datasheet and Replacement


   Type Designator: AFN4440
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOP-8P
 

 AFN4440 substitution

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AFN4440 Datasheet (PDF)

 ..1. Size:599K  alfa-mos
 afn4440.pdf pdf_icon

AFN4440

AFN4440 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.1. Size:600K  alfa-mos
 afn4440w.pdf pdf_icon

AFN4440

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.1. Size:574K  alfa-mos
 afn4424.pdf pdf_icon

AFN4440

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:578K  alfa-mos
 afn4486.pdf pdf_icon

AFN4440

AFN4486 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4486, N-Channel enhancement mode 20V/ 9A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 7A,RDS(ON)=17m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=21m@VGS=1.8V These devices are particularly suited for low Super h

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Datasheet: AFN4214W , AFN4228 , AFN4248W , AFN4412 , AFN4412W , AFN4422 , AFN4424 , AFN4424W , AO3407 , AFN4440W , AFN4486 , AFN4546 , AFN4634WS , AFN4804 , AFN4808W , AFN4822S , AFN4822WS .

History: 2N60L-T60-K | SI2301-TP | TSF10N80M | AP60SL600AH | LSF65R570GT | BLS60R036-F | SIA448DJ

Keywords - AFN4440 MOSFET datasheet

 AFN4440 cross reference
 AFN4440 equivalent finder
 AFN4440 lookup
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