All MOSFET. AFN4808W Datasheet

 

AFN4808W Datasheet and Replacement


   Type Designator: AFN4808W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: DFN2X3
 

 AFN4808W substitution

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AFN4808W Datasheet (PDF)

 ..1. Size:581K  alfa-mos
 afn4808w.pdf pdf_icon

AFN4808W

AFN4808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=30m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=42m@VGS=1.8V These devices are particularly suited for low Su

 8.1. Size:537K  alfa-mos
 afn4804.pdf pdf_icon

AFN4808W

AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:515K  alfa-mos
 afn4822ws.pdf pdf_icon

AFN4808W

AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:515K  alfa-mos
 afn4822s.pdf pdf_icon

AFN4808W

AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Datasheet: AFN4424 , AFN4424W , AFN4440 , AFN4440W , AFN4486 , AFN4546 , AFN4634WS , AFN4804 , IRF3205 , AFN4822S , AFN4822WS , AFN4850WS , AFN4874WS , AFN4896 , AFN4900W , AFN4906 , AFN4922W .

History: 2SK3009B | AFN4822WS | QM3010G | TK11A65D | MMBF2202PT1 | TK12A45D | AP4435GJ-HF

Keywords - AFN4808W MOSFET datasheet

 AFN4808W cross reference
 AFN4808W equivalent finder
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 AFN4808W substitution
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