All MOSFET. AFN6561 Datasheet

 

AFN6561 Datasheet and Replacement


   Type Designator: AFN6561
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TSOP-6
 

 AFN6561 substitution

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AFN6561 Datasheet (PDF)

 ..1. Size:579K  alfa-mos
 afn6561.pdf pdf_icon

AFN6561

AFN6561 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=102m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:579K  alfa-mos
 afn6562.pdf pdf_icon

AFN6561

AFN6562 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=78m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m@VGS=2.5V These devices are particularly suited for low Super

 9.1. Size:549K  alfa-mos
 afn6520s.pdf pdf_icon

AFN6561

AFN6520S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=12.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 9.2. Size:571K  alfa-mos
 afn6530s.pdf pdf_icon

AFN6561

AFN6530S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=6.2m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Datasheet: AFN5904W , AFN5908W , AFN6011S , AFN6018S , AFN6202S , AFN6424S , AFN6520S , AFN6530S , IRF4905 , AFN6562 , AFN6820 , AFN6830 , AFN7002AS , AFN7002DS , AFN7002KAS , AFN7106S , AFN7400 .

History: OSG60R260DF | NCE603583 | HSU6901 | TPC8119 | GT060N10T | AFN3436 | RS1E200AH

Keywords - AFN6561 MOSFET datasheet

 AFN6561 cross reference
 AFN6561 equivalent finder
 AFN6561 lookup
 AFN6561 substitution
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