AFN6562 Datasheet. Specs and Replacement

Type Designator: AFN6562  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TSOP-6

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AFN6562 datasheet

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 afn6562.pdf pdf_icon

AFN6562

AFN6562 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=78m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m @VGS=2.5V These devices are particularly suited for low Super... See More ⇒

 8.1. Size:579K  alfa-mos
 afn6561.pdf pdf_icon

AFN6562

AFN6561 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=102m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒

 9.1. Size:549K  alfa-mos
 afn6520s.pdf pdf_icon

AFN6562

AFN6520S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=12.4m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f... See More ⇒

 9.2. Size:571K  alfa-mos
 afn6530s.pdf pdf_icon

AFN6562

AFN6530S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=6.2m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

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Detailed specifications: AFN5908W, AFN6011S, AFN6018S, AFN6202S, AFN6424S, AFN6520S, AFN6530S, AFN6561, IRLB4132, AFN6820, AFN6830, AFN7002AS, AFN7002DS, AFN7002KAS, AFN7106S, AFN7400, AFN7402

Keywords - AFN6562 MOSFET specs

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