AFN7002DS Datasheet and Replacement
Type Designator: AFN7002DS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.64 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT-363
AFN7002DS substitution
AFN7002DS Datasheet (PDF)
afn7002ds.pdf

AFN7002DS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002DS, N-Channel enhancement mode 60V/0.5A,RDS(ON)=3000m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A,RDS(ON)=4000m@VGS=5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-V
afn7002as.pdf

AFN7002AS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002AS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=3000m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=4000m@VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afn7002kas.pdf

AFN7002KAS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002KAS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=3.0@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
Datasheet: AFN6424S , AFN6520S , AFN6530S , AFN6561 , AFN6562 , AFN6820 , AFN6830 , AFN7002AS , 2SK3568 , AFN7002KAS , AFN7106S , AFN7400 , AFN7402 , AFN7412 , AFN7420 , AFN7424S , AFN7472S .
History: IPS80R600P7 | SI1031R | STN2342 | AFP1433 | DAMH300N150 | SLP13N50A | HGB115N15S
Keywords - AFN7002DS MOSFET datasheet
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History: IPS80R600P7 | SI1031R | STN2342 | AFP1433 | DAMH300N150 | SLP13N50A | HGB115N15S



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