AFN7002DS
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN7002DS
Marking Code: 702
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.64
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 10
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
SOT-363
AFN7002DS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN7002DS
Datasheet (PDF)
..1. Size:538K alfa-mos
afn7002ds.pdf
AFN7002DS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002DS, N-Channel enhancement mode 60V/0.5A,RDS(ON)=3000m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A,RDS(ON)=4000m@VGS=5V to provide excellent RDS(ON), low gate charge. Low Offset (Error) Voltage These devices are particularly suited for low Low-V
7.1. Size:397K alfa-mos
afn7002as.pdf
AFN7002AS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002AS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=3000m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=4000m@VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
7.2. Size:736K alfa-mos
afn7002kas.pdf
AFN7002KAS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7002KAS, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.3A , R DS(ON)=3.0@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.