All MOSFET. AFN7424S Datasheet

 

AFN7424S Datasheet and Replacement


   Type Designator: AFN7424S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: DFN3.3X3.3-8L
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AFN7424S Datasheet (PDF)

 ..1. Size:504K  alfa-mos
 afn7424s.pdf pdf_icon

AFN7424S

AFN7424S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 8.1. Size:583K  alfa-mos
 afn7420.pdf pdf_icon

AFN7424S

AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:553K  alfa-mos
 afn7412.pdf pdf_icon

AFN7424S

AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m@VGS=1.8V These devices are particularly suited for low Supe

 9.2. Size:573K  alfa-mos
 afn7402.pdf pdf_icon

AFN7424S

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m@VGS=1.8V These devices are particularly suited for low Supe

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History: SI3477DV-T1-GE3 | CED05N8 | AON6794 | IRLR024 | SI2338DS | BUZ84 | BL10N70-A

Keywords - AFN7424S MOSFET datasheet

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