AFN8822
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN8822
Marking Code: 8822
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8
V
|Id|ⓘ - Maximum Drain Current: 7.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.65
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package: TSSOP-8P
AFN8822
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN8822
Datasheet (PDF)
..1. Size:691K alfa-mos
afn8822.pdf
AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited fo
0.1. Size:691K alfa-mos
afn8822s.pdf
AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul
9.1. Size:586K alfa-mos
afn8816.pdf
AFN8816 Alfa-MOS 30V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5A,RDS(ON)=24m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V These devices are particularly suited for low
9.2. Size:685K alfa-mos
afn8832.pdf
AFN8832 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8832, N-Channel enhancement mode 20V/5.4A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.0A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Supe
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