AFN8822 Datasheet. Specs and Replacement
Type Designator: AFN8822 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TSSOP-8P
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AFN8822 substitution
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AFN8822 datasheet
afn8822.pdf
AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited fo... See More ⇒
afn8822s.pdf
AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul... See More ⇒
afn8816.pdf
AFN8816 Alfa-MOS 30V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5A,RDS(ON)=24m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m @VGS=2.5V These devices are particularly suited for low ... See More ⇒
afn8832.pdf
AFN8832 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8832, N-Channel enhancement mode 20V/5.4A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.0A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒
Detailed specifications: AFN7472S, AFN8205, AFN8411, AFN8412, AFN8439, AFN8471, AFN8495, AFN8816, IRFP450, AFN8822S, AFN8832, AFN8904, AFN8918, AFN8936, AFN8968, AFN8987, AFN8987W
Keywords - AFN8822 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
