AFN8822S Datasheet and Replacement. Cross Reference Search

AFN8822S Datasheet (PDF)

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AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul

7.1. Size:691K alfa-mos
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AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited fo

9.1. Size:586K alfa-mos
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AFN8816 Alfa-MOS 30V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5A,RDS(ON)=24m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V These devices are particularly suited for low

9.2. Size:685K alfa-mos
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AFN8832 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8832, N-Channel enhancement mode 20V/5.4A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.0A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Supe

Datasheet: AFN8205 , AFN8411 , AFN8412 , AFN8439 , AFN8471 , AFN8495 , AFN8816 , AFN8822 , IRFZ24N , AFN8832 , AFN8904 , AFN8918 , AFN8936 , AFN8968 , AFN8987 , AFN8987W , AFN8988 .