AFN8904 Datasheet. Specs and Replacement
Type Designator: AFN8904 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: SOT-89
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AFN8904 substitution
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AFN8904 datasheet
afn8904.pdf
AFN8904 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒
afn8988.pdf
AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited... See More ⇒
afn8918.pdf
AFN8918 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒
afn8987.pdf
AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒
Detailed specifications: AFN8412, AFN8439, AFN8471, AFN8495, AFN8816, AFN8822, AFN8822S, AFN8832, BS170, AFN8918, AFN8936, AFN8968, AFN8987, AFN8987W, AFN8988, AFN8988W, AFN9530
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