All MOSFET. AFN8968 Datasheet

 

AFN8968 Datasheet and Replacement


   Type Designator: AFN8968
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-89
 

 AFN8968 substitution

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AFN8968 Datasheet (PDF)

 ..1. Size:670K  alfa-mos
 afn8968.pdf pdf_icon

AFN8968

AFN8968 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8968, N-Channel enhancement mode 100V/3.0A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.0A,RDS(ON)=310m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:694K  alfa-mos
 afn8988.pdf pdf_icon

AFN8968

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:688K  alfa-mos
 afn8918.pdf pdf_icon

AFN8968

AFN8918 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:397K  alfa-mos
 afn8987.pdf pdf_icon

AFN8968

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Datasheet: AFN8495 , AFN8816 , AFN8822 , AFN8822S , AFN8832 , AFN8904 , AFN8918 , AFN8936 , IRF1407 , AFN8987 , AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 , AFN9971 , AFN9971B .

History: SWP110R06VT | GSM7402 | HUFA76609D3S

Keywords - AFN8968 MOSFET datasheet

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