All MOSFET. AFN8987 Datasheet

 

AFN8987 Datasheet and Replacement


   Type Designator: AFN8987
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT-89
 

 AFN8987 substitution

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AFN8987 Datasheet (PDF)

 ..1. Size:397K  alfa-mos
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AFN8987

AFN8987 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 0.1. Size:683K  alfa-mos
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AFN8987

AFN8987W Alfa-MOS 80V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.1. Size:694K  alfa-mos
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AFN8987

AFN8988 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.2. Size:695K  alfa-mos
 afn8988w.pdf pdf_icon

AFN8987

AFN8988W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

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Datasheet: AFN8816 , AFN8822 , AFN8822S , AFN8832 , AFN8904 , AFN8918 , AFN8936 , AFN8968 , 5N65 , AFN8987W , AFN8988 , AFN8988W , AFN9530 , AFN9910 , AFN9971 , AFN9971B , AFN9972S .

Keywords - AFN8987 MOSFET datasheet

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