IRLU024 PDF Specs and Replacement
Type Designator: IRLU024
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Id| ⓘ - Maximum Drain Current: 14
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 360
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO251
-
MOSFET ⓘ Cross-Reference Search
IRLU024 PDF Specs
..2. Size:744K international rectifier
irlr024pbf irlu024pbf.pdf 
PD- 96091 IRLR024PbF IRLU024PbF HEXFET Power MOSFET Lead-Free Description Absolute Maximum Ratings 08/01/06 Document Number 91322 www.vishay.com 1 IRLR/U024PbF Document Number 91322 www.vishay.com 2 IRLR/U024PbF Document Number 91322 www.vishay.com 3 IRLR/U024PbF Document Number 91322 www.vishay.com 4 IRLR/U024PbF Document Number 91322 www.vishay.com 5 IRLR... See More ⇒
..3. Size:1198K vishay
irlr024 irlu024 sihlr024 sihlu024.pdf 
IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Surface Mount (IRLR024/SiHLR024) RDS(on) ( )VGS = 5.0 V 0.10 RoHS* Straight Lead (IRLU024/SiHLU024) Qg (Max.) (nC) 18 COMPLIANT Available in Tape and Reel Qgs (nC) 4.5 Qgd (nC) 12 Logic-Level Gate Drive Configuration Single ... See More ⇒
0.1. Size:162K 1
irlu024n.pdf 
PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.065 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowes... See More ⇒
0.2. Size:220K 1
irlu024a.pdf 
IRLR/U024A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.061 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra... See More ⇒
0.3. Size:490K international rectifier
auirlr024n auirlu024n.pdf 
AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com... See More ⇒
0.4. Size:260K international rectifier
auirlu024z.pdf 
PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature G Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax S ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D... See More ⇒
0.5. Size:308K international rectifier
irlr024npbf irlu024npbf.pdf 
PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065 G l Fast Switching l Fully Avalanche Rated ID = 17A S l Lead-Free Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni... See More ⇒
0.6. Size:334K international rectifier
irlr024zpbf irlu024zpbf.pdf 
PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET Power MOSFET Features n Logic Level D n Advanced Process Technology VDSS = 55V n Ultra Low On-Resistance n 175 C Operating Temperature RDS(on) = 58m n Fast Switching G n Repetitive Avalanche Allowed up to Tjmax n Lead-Free ID = 16A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ext... See More ⇒
0.7. Size:717K infineon
auirlr024z auirlu024z.pdf 
AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De... See More ⇒
0.8. Size:848K cn vbsemi
irlu024npbf.pdf 
IRLU024NPBF www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secon... See More ⇒
0.9. Size:260K inchange semiconductor
irlu024n.pdf 
isc N-Channel MOSFET Transistor IRLU024N FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
Detailed specifications: IRLSZ14A
, IRLSZ24A
, IRLSZ34A
, IRLSZ44A
, IRLU010
, IRLU014
, IRLU014A
, IRLU020
, IRFB7545
, IRLU024A
, IRLU024N
, IRLU110A
, IRLU120A
, IRLU120N
, IRLU130A
, IRLU210A
, IRLU220A
.
Keywords - IRLU024 MOSFET specs
IRLU024 cross reference
IRLU024 equivalent finder
IRLU024 pdf lookup
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.