AFP2301AS Datasheet. Specs and Replacement

Type Designator: AFP2301AS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 223 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: SOT-23

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AFP2301AS substitution

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AFP2301AS datasheet

 ..1. Size:651K  alfa-mos
 afp2301as.pdf pdf_icon

AFP2301AS

AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒

 6.1. Size:651K  alfa-mos
 afp2301a.pdf pdf_icon

AFP2301AS

AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly ... See More ⇒

 7.1. Size:519K  alfa-mos
 afp2301s.pdf pdf_icon

AFP2301AS

AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly ... See More ⇒

 7.2. Size:519K  alfa-mos
 afp2301.pdf pdf_icon

AFP2301AS

AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su... See More ⇒

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Detailed specifications: AFP1073, AFP1303, AFP1413, AFP1433, AFP1810, AFP1913, AFP2301, AFP2301A, IRLB3034, AFP2301S, AFP2303, AFP2303A, AFP2307A, AFP2309, AFP2309A, AFP2311, AFP2311A

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