All MOSFET. AFP2301S Datasheet

 

AFP2301S Datasheet and Replacement


   Type Designator: AFP2301S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23
 

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AFP2301S Datasheet (PDF)

 ..1. Size:519K  alfa-mos
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AFP2301S

AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 7.1. Size:519K  alfa-mos
 afp2301.pdf pdf_icon

AFP2301S

AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

 7.2. Size:651K  alfa-mos
 afp2301as.pdf pdf_icon

AFP2301S

AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

 7.3. Size:651K  alfa-mos
 afp2301a.pdf pdf_icon

AFP2301S

AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

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Datasheet: AFP1303 , AFP1413 , AFP1433 , AFP1810 , AFP1913 , AFP2301 , AFP2301A , AFP2301AS , AON7403 , AFP2303 , AFP2303A , AFP2307A , AFP2309 , AFP2309A , AFP2311 , AFP2311A , AFP2317 .

History: CSFR7N60D | SPP03N60C3 | IXFH88N20Q | TSM2312CX | CJQ4406 | 2N7002NXBK | SUD50P10-43L

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