AFP2309A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP2309A
Marking Code: 09*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.7
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.305
Ohm
Package:
SOT-23
AFP2309A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP2309A
Datasheet (PDF)
..1. Size:693K alfa-mos
afp2309a.pdf 
AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
7.1. Size:561K alfa-mos
afp2309.pdf
AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
8.1. Size:709K alfa-mos
afp2307a.pdf
AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par
8.2. Size:696K alfa-mos
afp2303a.pdf
AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
8.3. Size:519K alfa-mos
afp2301s.pdf
AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
8.4. Size:519K alfa-mos
afp2301.pdf
AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su
8.5. Size:564K alfa-mos
afp2303.pdf
AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
8.6. Size:651K alfa-mos
afp2301as.pdf
AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl
8.7. Size:651K alfa-mos
afp2301a.pdf
AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
8.8. Size:849K cn vbsemi
afp2307as23.pdf
AFP2307AS23www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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