AFP2379 Specs and Replacement
Type Designator: AFP2379
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 3.6
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 45
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135
Ohm
Package:
SOT-23
-
MOSFET ⓘ Cross-Reference Search
AFP2379 datasheet
..1. Size:567K alfa-mos
afp2379.pdf 
AFP2379 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2379, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=135m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=150m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒
9.1. Size:677K alfa-mos
afp2337a.pdf
AFP2337A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2337A, P-Channel enhancement mode 30V/1.2A,RDS(ON)=890m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/0.6A,RDS(ON)=1450m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited... See More ⇒
9.2. Size:709K alfa-mos
afp2307a.pdf
AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par... See More ⇒
9.3. Size:471K alfa-mos
afp2367s.pdf
AFP2367S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=80m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m @VGS=-1.8V These devices are particularly suited for... See More ⇒
9.4. Size:696K alfa-mos
afp2303a.pdf
AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒
9.5. Size:718K alfa-mos
afp2319as.pdf
AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m @VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly ... See More ⇒
9.6. Size:603K alfa-mos
afp2367as.pdf
AFP2367AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.5A,RDS(ON)=98m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m @VGS=-1.8V These devices are particularly suited f... See More ⇒
9.7. Size:564K alfa-mos
afp2323.pdf
AFP2323 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=235m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
9.8. Size:519K alfa-mos
afp2301s.pdf
AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly ... See More ⇒
9.9. Size:557K alfa-mos
afp2317.pdf
AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒
9.10. Size:490K alfa-mos
afp2341.pdf
AFP2341 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=55m @VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=68m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=85m @VGS=-1.8V These devices are particularly suited for l... See More ⇒
9.11. Size:561K alfa-mos
afp2309.pdf
AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒
9.12. Size:490K alfa-mos
afp2311.pdf
AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100m @VGS=1.8V These devices are particularly suited for low ... See More ⇒
9.13. Size:689K alfa-mos
afp2319a.pdf
AFP2319A Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m @VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=130m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
9.14. Size:519K alfa-mos
afp2301.pdf
AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su... See More ⇒
9.15. Size:564K alfa-mos
afp2303.pdf
AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
9.16. Size:693K alfa-mos
afp2309a.pdf
AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
9.17. Size:621K alfa-mos
afp2311a.pdf
AFP2311A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=60m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=75m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.8A,RDS(ON)=100m @VGS=1.8V These devices are particularly suited for lo... See More ⇒
9.18. Size:621K alfa-mos
afp2343a.pdf
AFP2343A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70m @VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=92m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180m @VGS=-1.8V These devices are particularly suited fo... See More ⇒
9.19. Size:696K alfa-mos
afp2323a.pdf
AFP2323A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=240m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒
9.20. Size:651K alfa-mos
afp2301as.pdf
AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒
9.21. Size:651K alfa-mos
afp2301a.pdf
AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly ... See More ⇒
9.22. Size:696K alfa-mos
afp2333a.pdf
AFP2333A Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2333A, P-Channel enhancement mode -25V/-2.8A,RDS(ON)=145m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -25V/-2.4A,RDS(ON)=180m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒
9.23. Size:849K cn vbsemi
afp2307as23.pdf
AFP2307AS23 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒
Detailed specifications: AFP2323
, AFP2323A
, AFP2333A
, AFP2337A
, AFP2341
, AFP2343A
, AFP2367AS
, AFP2367S
, IRF540
, AFP2911W
, AFP2913W
, AFP3050S
, AFP3401AS
, AFP3401S
, AFP3403
, AFP3403A
, AFP3405
.
History: FDC3612
Keywords - AFP2379 MOSFET specs
AFP2379 cross reference
AFP2379 equivalent finder
AFP2379 pdf lookup
AFP2379 substitution
AFP2379 replacement
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