AFP2379 MOSFET. Datasheet pdf. Equivalent
Type Designator: AFP2379
Marking Code: 79*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 3.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 5 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 45 pF
Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm
Package: SOT-23
AFP2379 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFP2379 Datasheet (PDF)
1.1. afp2379.pdf 
Size:567K _upd-mosfet
AFP2379 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2379, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
5.1. afp2367as.pdf Size:603K _upd-mosfet
AFP2367AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V These devices are particularly suited f
5.2. afp2333a.pdf Size:696K _upd-mosfet
AFP2333A Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2333A, P-Channel enhancement mode -25V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -25V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
5.3. afp2337a.pdf Size:677K _upd-mosfet
AFP2337A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2337A, P-Channel enhancement mode 30V/1.2A,RDS(ON)=890mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/0.6A,RDS(ON)=1450mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
5.4. afp2301a.pdf Size:651K _upd-mosfet
AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
5.5. afp2319a.pdf Size:689K _upd-mosfet
AFP2319A Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=130mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
5.6. afp2303a.pdf Size:696K _upd-mosfet
AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
5.7. afp2367s.pdf Size:471K _upd-mosfet
AFP2367S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=80mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V These devices are particularly suited for
5.8. afp2301as.pdf Size:651K _upd-mosfet
AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl
5.9. afp2343a.pdf Size:621K _upd-mosfet
AFP2343A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70mΩ@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=92mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V These devices are particularly suited fo
5.10. afp2319as.pdf Size:718K _upd-mosfet
AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
5.11. afp2301.pdf Size:519K _upd-mosfet
AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su
5.12. afp2301s.pdf Size:519K _upd-mosfet
AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
5.13. afp2307a.pdf Size:709K _upd-mosfet
AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 mΩ@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 mΩ@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par
5.14. afp2303.pdf Size:564K _upd-mosfet
AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
5.15. afp2311a.pdf Size:621K _upd-mosfet
AFP2311A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=60mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=75mΩ@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.8A,RDS(ON)=100mΩ@VGS=1.8V These devices are particularly suited for lo
5.16. afp2341.pdf Size:490K _upd-mosfet
AFP2341 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=55mΩ@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=68mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=85mΩ@VGS=-1.8V These devices are particularly suited for l
5.17. afp2309.pdf Size:561K _upd-mosfet
AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
5.18. afp2309a.pdf Size:693K _upd-mosfet
AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
5.19. afp2323.pdf Size:564K _upd-mosfet
AFP2323 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=235mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
5.20. afp2323a.pdf Size:696K _upd-mosfet
AFP2323A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=240mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
5.21. afp2317.pdf Size:557K _upd-mosfet
AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
5.22. afp2311.pdf Size:490K _upd-mosfet
AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100mΩ@VGS=1.8V These devices are particularly suited for low
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
