All MOSFET. AFP2379 Datasheet

 

AFP2379 MOSFET. Datasheet pdf. Equivalent

Type Designator: AFP2379

Marking Code: 79*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 3.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 5 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm

Package: SOT-23

AFP2379 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP2379 Datasheet (PDF)

1.1. afp2379.pdf Size:567K _upd-mosfet

AFP2379
AFP2379

AFP2379 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2379, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

5.1. afp2367as.pdf Size:603K _upd-mosfet

AFP2379
AFP2379

AFP2367AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.5A,RDS(ON)=98mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130mΩ@VGS=-1.8V These devices are particularly suited f

5.2. afp2333a.pdf Size:696K _upd-mosfet

AFP2379
AFP2379

AFP2333A Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2333A, P-Channel enhancement mode -25V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -25V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 5.3. afp2337a.pdf Size:677K _upd-mosfet

AFP2379
AFP2379

AFP2337A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2337A, P-Channel enhancement mode 30V/1.2A,RDS(ON)=890mΩ@VGS=10V MOSFET, uses Advanced Trench Technology 30V/0.6A,RDS(ON)=1450mΩ@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

5.4. afp2301a.pdf Size:651K _upd-mosfet

AFP2379
AFP2379

AFP2301A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 5.5. afp2319a.pdf Size:689K _upd-mosfet

AFP2379
AFP2379

AFP2319A Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=130mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

5.6. afp2303a.pdf Size:696K _upd-mosfet

AFP2379
AFP2379

AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

5.7. afp2367s.pdf Size:471K _upd-mosfet

AFP2379
AFP2379

AFP2367S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=80mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V These devices are particularly suited for

5.8. afp2301as.pdf Size:651K _upd-mosfet

AFP2379
AFP2379

AFP2301AS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

5.9. afp2343a.pdf Size:621K _upd-mosfet

AFP2379
AFP2379

AFP2343A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70mΩ@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=92mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V These devices are particularly suited fo

5.10. afp2319as.pdf Size:718K _upd-mosfet

AFP2379
AFP2379

AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

5.11. afp2301.pdf Size:519K _upd-mosfet

AFP2379
AFP2379

AFP2301 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=155mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

5.12. afp2301s.pdf Size:519K _upd-mosfet

AFP2379
AFP2379

AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

5.13. afp2307a.pdf Size:709K _upd-mosfet

AFP2379
AFP2379

AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 mΩ@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 mΩ@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par

5.14. afp2303.pdf Size:564K _upd-mosfet

AFP2379
AFP2379

AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

5.15. afp2311a.pdf Size:621K _upd-mosfet

AFP2379
AFP2379

AFP2311A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=60mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=75mΩ@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.8A,RDS(ON)=100mΩ@VGS=1.8V These devices are particularly suited for lo

5.16. afp2341.pdf Size:490K _upd-mosfet

AFP2379
AFP2379

AFP2341 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=55mΩ@VGS=- 4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=68mΩ@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=85mΩ@VGS=-1.8V These devices are particularly suited for l

5.17. afp2309.pdf Size:561K _upd-mosfet

AFP2379
AFP2379

AFP2309 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.4A,RDS(ON)=320mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

5.18. afp2309a.pdf Size:693K _upd-mosfet

AFP2379
AFP2379

AFP2309A Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305mΩ@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-1.6A,RDS(ON)=320mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

5.19. afp2323.pdf Size:564K _upd-mosfet

AFP2379
AFP2379

AFP2323 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=235mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

5.20. afp2323a.pdf Size:696K _upd-mosfet

AFP2379
AFP2379

AFP2323A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=240mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

5.21. afp2317.pdf Size:557K _upd-mosfet

AFP2379
AFP2379

AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67mΩ@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

5.22. afp2311.pdf Size:490K _upd-mosfet

AFP2379
AFP2379

AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100mΩ@VGS=1.8V These devices are particularly suited for low

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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