All MOSFET. AFP2379 Datasheet

 

AFP2379 Datasheet and Replacement


   Type Designator: AFP2379
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: SOT-23
 

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AFP2379 Datasheet (PDF)

 ..1. Size:567K  alfa-mos
afp2379.pdf pdf_icon

AFP2379

AFP2379 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2379, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=135m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=150m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.1. Size:677K  alfa-mos
afp2337a.pdf pdf_icon

AFP2379

AFP2337A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2337A, P-Channel enhancement mode 30V/1.2A,RDS(ON)=890m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/0.6A,RDS(ON)=1450m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:709K  alfa-mos
afp2307a.pdf pdf_icon

AFP2379

AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par

 9.3. Size:471K  alfa-mos
afp2367s.pdf pdf_icon

AFP2379

AFP2367S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=80m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m@VGS=-1.8V These devices are particularly suited for

Datasheet: AFP2323 , AFP2323A , AFP2333A , AFP2337A , AFP2341 , AFP2343A , AFP2367AS , AFP2367S , IRF540N , AFP2911W , AFP2913W , AFP3050S , AFP3401AS , AFP3401S , AFP3403 , AFP3403A , AFP3405 .

History: AP94T07GP1-HF | AP9576GM-HF | AOD4T60 | AFP3415 | AOD504 | VBE2625 | VBE2412

Keywords - AFP2379 MOSFET datasheet

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